NVD5C486NL دیتاشیت

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مشاهده دیتاشیت NVD5C486NL	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NVD5C486NLT4G
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 2.9W;18W
Total Gate Charge (Qg@Vgs): 9.8nC@10V
Drain Source Voltage (Vdss): 40V
Input Capacitance (Ciss@Vds): 530pF@25V
Continuous Drain Current (Id): 9.8A;24A
Gate Threshold Voltage (Vgs(th)@Id): 2.2V@20uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 16mΩ@10A,10V
Package: DPAK-3
Manufacturer: onsemi
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
FET Feature: -
Power Dissipation (Max): 2.9W (Ta), 18W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: NVD5C4
detail: N-Channel 40V 9.8A (Ta), 24A (Tc) 2.9W (Ta), 18W (Tc) Surface Mount DPAK